• 文献标题:   Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (000(1)over-bar) surface-Transmission electron microscopy and density functional theory studies
  • 文献类型:   Article
  • 作  者:   BORYSIUK J, SOLTYS J, PIECHOTA J, KRUKOWSKI S, BARANOWSKI JM, STEPNIEWSKI R
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Polish Acad Sci
  • 被引频次:   4
  • DOI:   10.1063/1.4863644
  • 出版年:   2014

▎ 摘  要

The principal structural defects in graphene multilayers synthesized on the carbon-terminated face of a 4H-SiC (000 (1) over bar) substrate were investigated using the high-resolution transmission electron microscopy. The analyzed systems include a wide variety of defected structures such as edge dislocations, rotational multilayers, and grain boundaries. It was shown that graphene layers are composed of grains of the size of several nanometres or larger; they differ in a relative rotation by large angles, close to 30 degrees. The structure of graphene multilayers results from the synthesis on a SiC (000 (1) over bar) surface, which proceeds via intensive nucleation of new graphene layers that coalesce under various angles creating an immense orientational disorder. Structural defects are associated with a built-in strain resulting from a lattice mismatch between the SiC substrate and the graphene layers. The density functional theory data show that the high-angular disorder of AB stacked bilayers is not restoring the hexagonal symmetry of the lattice. (c) 2014 AIP Publishing LLC.