▎ 摘　　要

This work presents solution-processed high-performance graphene quantum dots (GQDs) decorated amor-phous InGaZnO (alpha-IGZO) thin-film transistors (TFTs) based on ZrOx as gate dielectrics. Compare with pure IGZO TFTs, GQDs-modified alpha-IGZO TFTs devices with optimized doping content have demonstrated better performances, including a larger field-effect mobility (mu FE) of 35.91 cm2 V -1 s -1 , a higher on/off current ratio (ION/IOFF) of 5.04 x 10 8 , a smaller subthreshold swing (SS) of 0.11 V dec-1 and a smaller interfacial trap states (Dit, 1.57 x 10 12 cm -2). Moreover, the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml-1 have shown excellent stability under bias stress and illumination stress conditions. To demonstrate the potential applications of alpha-IGZO TFTs in logic circuits, a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrOx has been integrated, demonstrating good dynamic behavior and a high gain of 9.3. Low-frequency noise (LFN) characteristics of GQDs-IGZO/ZrOx TFTs have suggested that the fluctua-tions in mobility are the noise source. Based on all the experimental findings, it can be concluded that solution-processed GQDs-IGZO/ZrOx TFT may envision promising applications in optoelectronics.(c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.