▎ 摘　　要

Multilayer graphene has increasingly attracted significant research interest owing to its high conductivity with an available band gap. Chemical vapor deposition (CVD) has shown a great promise for large-scale multilayer graphene growth with a high temperature (typically 1000 degrees C). Here, we adopt camphor as the hydrocarbon feedstock and nickel as the catalyst to grow multilayer graphene at a low temperature down to 550 degrees C. The transferred multilayer graphene shows a uniform and continuous surface morphology with a low surface roughness down to 0.6 nm and few defects. In addition, the low temperature CVD technique can be applied in the three-dimensional architecture of multilayer graphene. Our work may pave a way to an undemanding route for economical and convenient multilayer graphene growth and its applications in microelectronic devices.