▎ 摘　　要

Graphene has exceptional electronic, optical, mechanical and thermal properties that determine its great potential in electronic, optoelectronic and sensing applications. In this study graphene has been covalently functionalized with azobenzene (AB) photosensitizer. The field-effect transistor (FET) with AB-functionalized graphene exhibited the p-doping effect with hole concentration ca 4 x 10(12) cm(-2) and interesting optoelectronic behaviour. The Dirac point of graphene in the FET could be controlled by light modulation due to azobenzene reversible switching between cis and trans conformations upon UV and visible light irradiation. Cis structure formation was initiated by UV irradiation that induced the shift of the Dirac point of graphene toward positive gate voltage. The reverse process back to trans form occurred under visible light irradiation or in darkness inducing the shift of the Dirac point toward negative gate voltage. The effect was reproduced repeatedly.