• 文献标题:   Defect-Free Mechanical Graphene Transfer Using n-Doping Adhesive Gel Buffer
  • 文献类型:   Article
  • 作  者:   SEO YM, JANG W, GU T, SEOK HJ, HAN S, CHOI BL, KIM HK, CHAE H, KANG J, WHANG D
  • 作者关键词:   graphene, defectfree transfer, electron doping, adhesive gel buffer layer, charge transfer
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:  
  • 被引频次:   12
  • DOI:   10.1021/acsnano.0c10798 EA JUN 2021
  • 出版年:   2021

▎ 摘  要

The synthesis of uniform low-defect graphene on a catalytic metal substrate is getting closer to the industrial level. However, its practical application is still challenging due to the lack of an appropriate method for its scalable damage-free transfer to a device substrate. Here, an efficient approach for a defect-free, etchant-free, wrinkle-free, and large-area graphene transfer is demonstrated by exploiting a multifunctional viscoelastic polymer gel as a simultaneous shock-free adhesive and dopant layer. Initially, an amine-rich polymer solution in its liquid form allows for conformal coating on a graphene layer grown on a Cu substrate. The subsequent thermally cured soft gel enables the shock-free and wrinkle-free direct mechanical exfoliation of graphene from a substrate due to its strong charge-transfer interaction with graphene and excellent shock absorption. The adhesive gel with a high optical transparency works as an electron doping layer toward graphene, which exhibits significantly reduced sheet resistances without optical transmittance loss. Lastly, the transferred graphene layer shows high mechanical and chemical stabilities under the repeated bending test and exposure to various solvents. This gel-assisted mechanical transfer method can be a solution to connect the missing part between large-scale graphene synthesis and next-generation electronics and optoelectronic applications.