• 文献标题:   Scaling of graphene integrated circuits
  • 文献类型:   Article
  • 作  者:   BIANCHI M, GUERRIERO E, FIOCCO M, ALBERTI R, POLLONI L, BEHNAM A, CARRION EA, POP E, SORDAN R
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Politecn Milan
  • 被引频次:   11
  • DOI:   10.1039/c5nr01126d
  • 出版年:   2015

▎ 摘  要

The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 mu m gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.