▎ 摘　　要

The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near-infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems, confirming the theoretical predictions by Lazzeri.