• 文献标题:   Conductivity of a graphene strip: Width and gate-voltage dependencies
  • 文献类型:   Article
  • 作  者:   VASKO FT, ZOZOULENKO IV
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   NAS Ukraine
  • 被引频次:   30
  • DOI:   10.1063/1.3486178
  • 出版年:   2010

▎ 摘  要

We study the conductivity of a graphene strip taking into account electrostatically induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5-3 mu m can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene. 2010 American Institute of Physics. [doi :10.1063/1.3486178]