▎ 摘　　要

Graphene nanoribbons are of potential use in the development of electronic and optoelectronic devices. However, the preparation of narrow and long nanoribbons with smooth edges, sizeable bandgaps and high mobilities is challenging. Here we show that sub-10-nm-wide semiconducting graphene nanoribbons with atomically smooth closed edges can be produced by squashing carbon nanotubes using a high-pressure and thermal treatment. With this approach, nanoribbons as narrow as 1.4 nm can be created, and up to 54% of single- and double-walled nanotubes in a sample can be converted into edge-closed nanoribbons. We also fabricate edge-opened nanoribbons using nitric acid as the oxidant to selectively etch the edges of the squashed nanotubes under high pressure. A field-effect transistor fabricated using a 2.8-nm-wide edge-closed nanoribbon exhibits an on/off current ratio of more than 10(4), from which a bandgap of around 494 meV is estimated. The device also exhibits a field-effect mobility of 2,443 cm(2) V-1 s(-1) and an on-state channel conductivity of 7.42 mS. Narrow, long graphene nanoribbons with atomically smooth and defect-free edges can be produced by squashing carbon nanotubes, and can be used to fabricate a sub-3-nm-wide channel field-effect transistor with a mobility of 2,443 cm(2) V-1 s(-1).