• 文献标题:   Penetration (intercalation) of copper atoms under a graphene layer on iridium (111)
  • 文献类型:   Article
  • 作  者:   RUT KOV EV, GALL NR
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   4
  • DOI:   10.1134/S1063782609100017
  • 出版年:   2009

▎ 摘  要

The mechanisms of intercalation of a graphene layer (a two-dimensional graphite film) on a metal (iridium, the (111) face) with copper atoms are studied. It is shown that, in the rather narrow temperature range 1100-1200 K, a thin copper film deposited onto the graphene surface at room temperature totally breaks down, and the atoms transfer to the intercalated state, i.e., become arranged between the graphene layer and the substrate. The nature of the asymmetry of intercalation and backward escape of atoms with high ionization potentials is discussed. Due to the asymmetry, the graphene layer plays the role of a trap for such particles.