• 文献标题:   Terahertz plasmon-emitting graphene-channel transistor
  • 文献类型:   Article
  • 作  者:   DUBINOV AA, ALESHKIN VY, MOROZOV SV, RYZHII V, OTSUJI T
  • 作者关键词:   terahertz, plasmon, graphene, transistor
  • 出版物名称:   OPTOELECTRONICS REVIEW
  • ISSN:   1230-3402 EI 1896-3757
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   2
  • DOI:   10.1016/j.opelre.2019.11.003
  • 出版年:   2019

▎ 摘  要

In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion. (C) 2019 Association of Polish Electrical Engineers (SEP). Published by Elsevier B.V. All rights reserved.