▎ 摘　　要

Richness and complexity of Raman spectra related to graphene materials is established from years to decades, with, among others: the well-known G, D, 2D, ... bands plus a plethora of weaker bands related to disorder behavior, doping, stress, crystal orientation or stacking information. Herein, we report on how to detect crumpling effects in Raman spectra, using a large variety of few and multilayer graphene. The main finding is that these crumples enhance the G band intensity like it does with twisted bi layer graphene. We updated the D over G band intensity ratio versus G bandwidth plot, which is generally used to disentangle point and linear defects origin, by reporting surface defects created by crumples. Moreover, we report for the first time on the existence 23 resonant additional bands at 633 nm. We attribute them to edge modes formed by high density of crumples. We use Raman plots (2D bands versus G band positions and widths) to gain qualitative information about the way layers are stacked.