• 文献标题:   Resistivity of Graphene Nanoribbon Interconnects
  • 文献类型:   Article
  • 作  者:   MURALI R, BRENNER K, YANG YX, BECK T, MEINDL JD
  • 作者关键词:   graphene, nanoribbon, resistivity
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   128
  • DOI:   10.1109/LED.2009.2020182
  • 出版年:   2009

▎ 摘  要

Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth (18 nm < W < 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.