▎ 摘　　要

The present work emphasizes on the use of laser assisted reduction for the fabrication of freestanding three-layer graphene (3LG)-graphene oxide heterostructure (LRG). PEDOT:PSS due to its high spectral responsivity and electron blocking nature was deposited over LRG for better photon absorption, exciton generation and prevention of electron-hole recombination. Powder XRD and micro-Raman studies revealed the successful formation of LRG and PEDOT:PSS/LRG heterostructure. A superior photoresponse characteristics with an ultra-high gain exceeding 100%, responsivity and detectivity in the order of 10(2) AW(-1) and 10(10) Jones, respectively was observed under ultraviolet (365 nm) illumination for PEDOT:PSS/LRG. The superior performance was owed to the inhibition of charge carrier recombination by mid-gap state band in LRG. The fabricated films have a promising future in opto-electronic industry, sensing and environmental monitoring purposes.