▎ 摘　　要

The stability of graphene under oxidative conditions is crucial to both its applications as an electrical material and the lifetime of graphene-based devices. In this work, large-area high quality graphene film was synthesized through chemical vapor deposition (CVD-G) and transferred onto SiO2/Si substrate. Based on the electrical resistance monitoring, its conductivity stability in air was excellent under uncontrolled ambient conditions within 500 days. After kept in air over years, only tiny resistance oscillation and small increase of Raman D peak intensity of CVD-G have been observed. During a year, CVD-G had the highest resistance in July with high temperature and high relative humidity (the relative resistance changes were no more than 10%). The conductivity of CVD-G returned to the normal value again in the subsequent autumn (October) due to its reversible absorptions of oxidative gas species in air. The morphology characterizations of CVD-G showed it had a well-maintained continuous structure, therefore its electrical resistance was stable. (C) 2018 Elsevier Ltd. All rights reserved.