▎ 摘　　要

Memristors with gradual conduction modulation can store and process information simultaneously similar to the way biological synapses function by adjusting the connections between two neighboring neurons. However, developing a memristor device with high stability, high uniformity and low power consumption is a challenge in neuromorphic computing applications. In this work, a two-terminal memristor with a Ta/Ta2O5/AlN/graphene structure was prepared using a multi-layer graphene film as the bottom electrode. The device exhibits stable electrical characteristics at a direct current scan voltage. More importantly, this memristor can fully simulate the function and plasticity of biological synapses, including spiking-time-dependent plasticity, and excitatory postsynaptic current among others. The energy value of a write event can be as low as 37 femtojoule through a pulse with 0.8 V amplitude and 50 ns width, further demonstrating the low power consumption. According to the fitting results of the current-voltage curve, the conduction mechanism was ascribed to trap assisted tunneling. The Ta/Ta2O5/AlN/graphene memristor provides an excellent candidate for achieving artificial synaptic neuromorphic computing with stability and low power consumption.