• 文献标题:   Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy
  • 文献类型:   Article
  • 作  者:   MAEDA F, HIBINO H
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   NTT Corp
  • 被引频次:   1
  • DOI:   10.1143/JJAP.51.06FD16
  • 出版年:   2012

▎ 摘  要

A graphene nanofin consists of few-layer graphene and sticks out from the surface like a fin. To understand what graphene nanofin is and gain insight into its formation mechanism, we grew graphene at various substrate temperatures by gas-source molecular beam epitaxy (MBE) on previously prepared epitaxial graphene formed on a SiC(0001). Then, the surfaces were observed using atomic force microscopy, transmission electron microscopy, and low-energy electron microscopy (LEEM). We found the graphene nanofin formation at the growth temperature from 600 to 915 degrees C. The LEEM and low-energy electron diffraction observations reveal that the crystal axes of the graphene layer are completely random, although their (0001) axes are aligned. This experimentally supports a formation mechanism where the nanofins are formed by the collision between incommensurate domains of graphene at their boundaries. (C) 2012 The Japan Society of Applied Physics