▎ 摘　　要

We synthesize turbostratic graphene via negative carbon ion implantation on the top of 300 nm-thick LiNbO3 films and LiNbO3 bulks. Carbon ions were bombarded into LiNbO3 samples directly at 30 keV with fluences of (2 -10) x 10(15)/cm(2), followed by annealing at (500-700) degrees C to form sp(2) -bonded hexagon carbon structure. Raman spectroscopy was used to characterize the synthesized graphene with different ion implantation fluences and annealing temperatures. The morphology of graphene and its distribution were investigated by scanning electron microscopy and EDS mapping images. Direct C implantation to LiNbO3 provides a promising way for integrating graphene-LiNbO3 structure in microelectron devices.