• 文献标题:   Intrinsic carrier mobility of germanene is larger than graphene's: first-principle calculations
  • 文献类型:   Article
  • 作  者:   YE XS, SHAO ZG, ZHAO HB, YANG L, WANG CL
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   S China Normal Univ
  • 被引频次:   66
  • DOI:   10.1039/c4ra01802h
  • 出版年:   2014

▎ 摘  要

Shown here is the intrinsic carrier mobility (ICM) of germanene, a group-IV graphene-like two-dimensional buckled nanosheet. Specifically, combining the Boltzmann transport equation with the relaxation time approximation at the first-principle level, it was calculated that the ICM of the germanene sheet can reach similar to 6 X 10(5) cm(2) V-1 s(-1), in an order of magnitude (10(5) cm(2) V-1 s(-1)), and even larger than that of graphene. The high ICM of germanene is attributed to the large buckled distance and the small effective mass. Since Ge has good compatibility with Si in the conventional semiconductor industry, the results indicate that germanene should be a good supplement to prospective nanoelectronics.