▎ 摘　　要

Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off-state leakage current in IZO/graphene.