▎ 摘　　要

The synthesis of graphene nanoribbons on complementary metal-oxide semiconductor-compatible substrates is a significant challenge hindering their integration into commercial semiconductor electronics. Here, the bottom-up synthesis of armchair graphene nanoribbons on epilayers of Ge on Si(001) via chemical vapor deposition is demonstrated. The synthesis leverages the previous discovery that graphene crystal growth can be driven with an extreme shape anisotropy on Ge(001) surfaces to directly form nanoribbons. However, compared to nanoribbon synthesis on Ge(001), synthesis on Ge/Si(001) is complicated by the possibility of Si diffusion to the Ge surface and the presence of threading dislocations. Herein, we demonstrate that similar to Ge(001), armchair nanoribbons with faceted edges and sub-10 nm widths can indeed be grown on Ge/Si(001). The nanoribbon synthesis proceeds faster than the diffusion of Si to the Ge surface if a sufficiently thick Ge epilayer is used (e.g., 3 mu m), thereby avoiding competing reactions that form SiC. Moreover, threading dislocations in the Ge epilayer are not observed to affect the nucleation or anisotropic growth kinetics of the nanoribbons. These results demonstrate that previous successes in graphene nanoribbon synthesis on Ge(001) can be extended to Si(001) by using epilayers of Ge, motivating the future exploration of this promising platform for hybrid semiconducting graphene/Si electronics.