• 文献标题:   Monte Carlo simulation study of spin transport in multilayer graphene with Bernal stacking
  • 文献类型:   Article
  • 作  者:   MISRA S, GHOSH B, NANDAL V, DUBEY L
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Indian Inst Technol
  • 被引频次:   0
  • DOI:   10.1063/1.4739730
  • 出版年:   2012

▎ 摘  要

In this work, we model spin transport in multilayer graphene (MLG) stacks with Bernal (ABA) stacking using semi-classical Monte Carlo simulations and the results are compared to bi-layer graphene. Both the D'yakonov-Perel and Elliot-Yafet mechanisms for spin relaxation are considered for modeling purposes. Varying the number of layers alters the band structure of the MLG. We study the effect of the band structures in determining the spin relaxation lengths of the different multilayer graphene stacks. We observe that as the number of layers increases the spin relaxation length increases up to a maximum value for 16 layers and then stays the same irrespective of the number of layers. We explain this trend in terms of the changing band structures which affects the scattering rates of the spin carriers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739730]