• 文献标题:   Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer
  • 文献类型:   Article
  • 作  者:   SINGH B, MEHTA BR, GOVIND, FENG X, MULLEN K
  • 作者关键词:   bipolar transistor switche, copper compound, graphene, hybrid integrated circuit, rectifying circuit
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Indian Inst Technol Delhi
  • 被引频次:   10
  • DOI:   10.1063/1.3663971
  • 出版年:   2011

▎ 摘  要

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663971]