• 文献标题:   Controlled Modulation of Electronic Properties of Graphene by Self-Assembled Monolayers on SiO2 Substrates
  • 文献类型:   Article
  • 作  者:   YAN Z, SUN ZZ, LU W, YAO J, ZHU Y, TOUR JM
  • 作者关键词:   graphene, sam, fet device, threshold voltage shift
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Rice Univ
  • 被引频次:   80
  • DOI:   10.1021/nn1034845
  • 出版年:   2011

▎ 摘  要

In this study, with self-assembled monolayers (SAMs) of aminopropyl-, ammoniumpropyl-, butyl-, and 1H,1H,2H,2H-perfluorooctyltriethoxysilanes deposited in-between graphene and the SiO2 substrate, a controlled doping of graphene was realized with a threshold voltage ranging from -18 to 30 V. In addition, the SAMs are covalently bonded to the SiO2 surface rather than the graphene surface, thereby producing minimal effects on the mobility of the graphene. Finally, it is more stable than conventional noncovalent dopants.