▎ 摘　　要

Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene. (C) 2017 American Vacuum Society.