▎ 摘　　要

Synthesizing few layer graphene at room temperature is highly desirable for practical applications and fundamental studies, but still challenging. Pulsed laser deposition (PLD) can achieve few layer graphene formations on nickel (Ni) at room temperature. Here, we have investigated the effect of stationary magnetic field on the growth of Ni and graphene by PLD at room temperature. Grazing X-ray Diffraction (GXRD) and Field Effect Scanning Electron Microscopy (FESEM) reveal the formation of smooth and highly crystalline Ni (111) texture with high growth rate through implementation of magnetic field during Ni growth and post annealing of the substrate. Raman spectroscopy, GXRD and Attenuated total reflectance Fourier transfer Infra Red (ATR-FTIR) spectroscopy was utilized to study the effects of magnetic field intensity on the graphene growth. The results reveal that the defects, surface coverage and number of graphene layers can be controlled through modification of magnetic field intensity. The possible mechanism of graphene growth at room temperature based on the effect of magnetic field on the plume species and interaction of created species on the Ni surface has been discussed.