• 文献标题:   Tight-binding description of graphene-BCN-graphene layered semiconductors
  • 文献类型:   Article
  • 作  者:   EBRAHIMI M, HORRI A, SANAEEPUR M, TAVAKOLI MB
  • 作者关键词:   bcn, graphene, boron nitride, tightbinding, dft
  • 出版物名称:   JOURNAL OF COMPUTATIONAL ELECTRONICS
  • ISSN:   1569-8025 EI 1572-8137
  • 通讯作者地址:   Arak Univ
  • 被引频次:   1
  • DOI:   10.1007/s10825-019-01442-z
  • 出版年:   2020

▎ 摘  要

Based on density functional calculations, tight-binding models are proposed for few layers of three BCN allotropes sandwiched between two layers of graphene. The results pave the road toward investigation of the performance of novel nanoelectronic devices such as vertical tunneling field effect transistors and nanoscale sensors operating on the basis of quantum tunneling through these layered materials-based systems.