▎ 摘　　要

Graphene doping principally commenced to compensate for its inert nature and create an appropriate bandgap. Doping of 3D graphene has emerged as a topic of interest because of attempts to combine its large available surface area-arising from its interconnected porous architecture-with superior catalytic, structural, chemical, and biocompatible characteristics that can be induced by doping. In light of the latest developments, this review provides an overview of the scalable chemical vapor deposition (CVD)-based growth of doped 3D graphene materials as well as their applications in various contexts, such as in devices used for energy generation and gas storage and biosensors. In particular, single- and multielement doping of 3D graphene by various dopants (such as nitrogen (N), boron (B), sulfur (S) and phosphorous (P)), the doping configurations of the resultant materials, an overview of recent developments in the field of CVD, and the influence of various parameters of CVD on graphene doping and 3D morphologies are focused in this paper. Finally, this report concludes the discussion by mentioning the existing challenges and future opportunities of these developing graphitic materials, intending to inspire the unveiling of more exciting functionalized 3D graphene morphologies and their potential properties, which can hopefully realize many possible applications.