• 文献标题:   Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine
  • 文献类型:   Article
  • 作  者:   SABRI SS, GUILLEMETTE J, GUERMOUNE A, SIAJ M, SZKOPEK T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Regrp Quebecois Mat Pointe
  • 被引频次:   7
  • DOI:   10.1063/1.3694741
  • 出版年:   2012

▎ 摘  要

We demonstrate that large-area, graphene field effect transistors with a passive parylene substrate and a polyethyleneimine functional layer have enhanced sensitivity to CO2 gas exposure. The electron doping of graphene, caused by protonated amine groups within the polyethyleneimine, is modulated by the formation of negatively charged species generated by CO2 adsorption. The charge doping mechanism is general, and quantitative doping density changes can be determined from the graphene field effect transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694741]