▎ 摘　　要

This article introduces an optical microscopy technique for the characterization of two-dimensional (2D) materials. The technique is based on the use of quadriwave lateral shearing interferometry (QLSI), a quantitative phase imaging technique that allows the imaging of both the intensity and the phase of an incoming light beam. The article shows how QLSI can be used to (i) image 2D materials with high contrast on transparent substrates, (ii) detect the presence of residues coming from the fabrication process, and (iii) map the 2D complex optical conductivity and complex refractive index by processing the intensity and phase images of a light beam crossing the 2D material of interest. To illustrate the versatility of this approach for 2D material imaging and characterization, measurements have been performed on graphene and MoS2.