• 文献标题:   Spin-injection into epitaxial graphene on silicon carbide
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   KONISHI K, CUI ZX, HIRAKI T, YOH KJ
  • 作者关键词:   low dimensional structure, silicon carbide, graphene, spininjection
  • 出版物名称:   JOURNAL OF CRYSTAL GROWTH
  • ISSN:   0022-0248
  • 通讯作者地址:   Hokkaido Univ
  • 被引频次:   1
  • DOI:   10.1016/j.jcrysgro.2012.12.168
  • 出版年:   2013

▎ 摘  要

We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 angstrom) and a ferromagnetic Co (600 angstrom) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement. (c) 2013 Elsevier B.V. All rights reserved.