▎ 摘　　要

We demonstrate low voltage operating complementary-type inverters based on graphene field-effect transistors (GFETs) by employing an interacting layer of solution-processed fluorocarbon copolymers. These graphene-based inverters with solution-processed aluminum oxide dielectrics exhibit a voltage gain of 0.4 V/V at a low operating voltage of 1.4 V. To enhance p-type and n-type operations for complementary-type inverters, we investigate the tunable device performance of the GFETs with a sandwich structure by comparing their electrical characteristics and Raman spectra with those of pristine GFETs. The sandwich structure contains a graphene channel positioned between the top and bottom films of the fluorocarbon copolymers. We believe that this work can provide a promising route for the emerging concept of graphene inverters for hybrid integrated circuits and logic applications in nanoelectronics.