▎ 摘　　要

Conventional graphene nanoribbon (GNR) field-effect transistor (FET) fabrication involved the wet process with the separated nanoribbon formation and device fabrication. Here, we demonstrate one simple and novel non-solution method to integrate the GNR formation and the FET fabrication, where a gold film is used as mask for electrode deposition, following by using a SnO2 nanoribbon as mask for the formation of GNR. The channel length and width can be controlled by the widths of the gold film and the SnO2 nanoribbon, respectively. It is found that the GNR with the width up to 330 nm presents the promising ambipolar field-effect properties in air ambient, the hole and electron mobilities are respectively as high as 904 and 703 cm(2)V(-1) s(-1), which benefits from the all dry process for both GNR fabrication and device fabrication. (C) 2015 Elsevier B.V. All rights reserved.