▎ 摘　　要

Herein, we present a potential approach for the qualitative production of quasi-defect-free reduced graphene oxide (QrGO) with semimetallic transport behavior. In rGO, the formation of defects is highly dependent on the oxidation process of graphite. Subsequent exfoliation of graphite oxide, the quasi-defect-free graphene oxide (QGO) shows abundant epoxy and hydroxyl groups which confirmed the suppressed structural deformation. Typical rGO and QrGO are compared to characterize the remarkable electrical, optical, and thermal properties of QrGO. In particular, under low temperature, the unusual carrier transport phenomena of QrGO exhibits a metallike behavior, unlike typical rGO, which shows an insulator-to-semimetal transition with variable-range hopping conduction behavior. This conduction mechanism, resembling that of mechanically exfoliated graphene, facilitates the fabrication of a QrGO-based conducting film with a high electrical conductivity of similar to 1000 S/cm. Moreover, during a 200-h test with temperature and moisture conditions of 85 degrees C and 85%, respectively, QrGO shows environmental stability with minimal fluctuations in resistance. Furthermore, a conducting paste was fabricated from QrGO in an aqueous solution, showing a highly concentrated solid content and excellent electrical conductivity. It shows great potential for the large-scale production of high-quality chemically exfoliated graphene for practical applications.