• 文献标题:   Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
  • 文献类型:   Article
  • 作  者:   RUTTER GM, GUISINGER NP, CRAIN JN, JARVIS EAA, STILES MD, LI T, FIRST PN, STROSCIO JA
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   148
  • DOI:   10.1103/PhysRevB.76.235416
  • 出版年:   2007

▎ 摘  要

Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of +/- 1 eV above or below the Fermi energy (E(F)). Our analysis of calculations based on density-functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.