▎ 摘　　要

Multi-layer graphene (MLG) films were transferred onto p-GaN layer as transparent conductive electrodes in InGaN green light-emitting diodes (MLG-GLEDs), and their optoelectronic properties were investigated. The interdiffusion between metal atoms from metal pads and Ga atoms from p-GaN had a strong effect on the contact barrier at graphene/p-GaN interface, resulting in substantial changes in transport characteristics of MLG-GLEDs and deterioration of the electrical contact between graphene and p-GaN. A high temperature annealing treatment was employed to improve the light-emitting performance of MLG-GLEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723813]