• 文献标题:   Out-of-Plane Dielectric Susceptibility of Graphene in Twistronic and Bernal Bilayers
  • 文献类型:   Article
  • 作  者:   SLIZOVSKIY S, GARCIARUIZ A, BERDYUGIN AI, XIN N, TANIGUCHI T, WATANABE K, GEIM AK, DRUMMOND ND, FAL KO VI
  • 作者关键词:   graphene, dielectric susceptibility, gating, screening, bilayer graphene exciton, twisted bilayer graphene
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:  
  • 被引频次:   17
  • DOI:   10.1021/acs.nanolett.1c02211 EA JUL 2021
  • 出版年:   2021

▎ 摘  要

We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene.both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability a(exp) = 10.8 angstrom(3) and effective out-of-plane dielectric susceptibility epsilon(z) = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.