• 文献标题:   Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives
  • 文献类型:   Article
  • 作  者:   HAJKOVA Z, LEDINSKY M, VETUSHKA A, STUCHLIK J, MULLER M, FEJFAR A, BOUSA M, KALBAC M, FRANK O
  • 作者关键词:   cvd graphene, microcrystalline silicon, solar cell, schottky junction, currentvoltage curve, cafm
  • 出版物名称:   CHEMICAL PHYSICS LETTERS
  • ISSN:   0009-2614 EI 1873-4448
  • 通讯作者地址:   Acad Sci Czech Republ
  • 被引频次:   4
  • DOI:   10.1016/j.cplett.2017.03.041
  • 出版年:   2017

▎ 摘  要

We present Schottky junction solar cell composed of graphene transferred onto hydrogenated amorphous and microcrystalline silicon, a low-cost alternative to well-explored crystalline silicon. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were characterized by current-voltage curves obtained locally by conductive atomic force microscopy (C-AFM) and macroscopically by standard solar simulator. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale. (C) 2017 Elsevier B.V. All rights reserved.