• 文献标题:   Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide
  • 文献类型:   Article
  • 作  者:   JIN C, LEE J, LEE E, HWANG E, LEE H
  • 作者关键词:  
  • 出版物名称:   CHEMICAL COMMUNICATIONS
  • ISSN:   1359-7345
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   55
  • DOI:   10.1039/c2cc30973d
  • 出版年:   2012

▎ 摘  要

Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.