• 文献标题:   Improved logic performance with semiconducting graphene nano mesh double gate field effect transistor
  • 文献类型:   Article
  • 作  者:   PALLA P, ANSARI HR, RAINA G, WU WP
  • 作者关键词:   graphene fieldeffect transistor, double gate fet, graphene nanomesh, driftdiffusion mode space, band gap engineering, semiconducting graphene, gnm atomistic simulation, gnm digital electronic, device simulation
  • 出版物名称:   INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
  • ISSN:   1475-7435 EI 1741-8151
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1504/IJNT.2021.116187
  • 出版年:   2021

▎ 摘  要

Realisation of field-effect transistors in graphene with an energy gap remains one of the major difficulties for graphene based electronics. One of the solutions to engineer bandgap in graphene is to convert graphene into a graphene nanomesh (GNM).We simulated double gate field-effect transistor with GNM as a channel material underneath an alumina passivation top gate stack, which directly contacts the GNM channel without an inserted buffer layer. With the presence of energy bandgaps, the electronic and transport properties of DG-GNMFET are notably improved, as demonstrated by reduced off-state leakage current, enhanced saturation current, and subthreshold slope. The GNM electrical parameters were extracted by using semi-empirical methods using atomistic tools and the device electrical performance was analysed using the drift-diffusion mode space model. With further advances in bandgap engineering, the GNM based devices may find applications in digital circuits.