▎ 摘　　要

We propose and extensively analyze a novel graphene-FET (GFET) with two capacitively coupled field-controlling electrodes (FCE) at the access region. The dc and RF characteristics of the proposed device are studied using analytical and numerical techniques and compared with the baseline designs. The independently biased FCEs could control the electric field and sheet carrier concentration at the ungated region, and thus reduce the access resistance effectively. The reduction of source/drain access resistance results in improved f(T) and f(MAX) compared with those of conventional GFETs of the same geometry. The proposed device with improved characteristics of GFET can be used for high-frequency applications.