▎ 摘　　要

Gelatin-graphene oxide composite films were prepared by spin coating graphene oxide (GO) dispersed in type-A gelatin on indium tin oxide (ITO) substrates. Current-voltage (I-V) characteristics of the composite film with Al as top electrode and ITO as bottom electrode, exhibited O-shaped memory behaviour. The influence of GO in the observed phenomenon was validated, when the I-V characteristics of pristine type-A gelatin film did not show any memory behaviour. Analysis of the forward and reverse I-V data leading to the ON and OFF states, respectively, revealed hopping type of conduction mechanism. We propose that formation and rupture of conducting filaments controlled by charge hopping mechanism leads to the observed low resistance (ON) and high resistance (OFF) states, respectively.