• 文献标题:   Graphene Q-Switched Cr:ZnSe Laser
  • 文献类型:   Article
  • 作  者:   WANG ZW, CHEN XF, HE JL, XU XG, ZHANG BT, YANG KJ, WANG RH, LIU XM
  • 作者关键词:   measurement by laser beam, graphene, laser excitation, silicon carbide, crystal, educational institution, pump laser, graphene saturable, passively qswitched
  • 出版物名称:   IEEE JOURNAL OF QUANTUM ELECTRONICS
  • ISSN:   0018-9197 EI 1558-1713
  • 通讯作者地址:   Shandong Univ
  • 被引频次:   3
  • DOI:   10.1109/JQE.2015.2410288
  • 出版年:   2015

▎ 摘  要

For the first time, to the best of our knowledge, a stable Q-switched Cr: ZnSe laser was realized with the graphene saturable absorber grown on SiC substrate. Under an absorbed pump power of 1.8 W, a maximum average output power of 256 mW was obtained with an optical-to-optical conversion efficiency of 14% and a slope efficiency of 19.6%, corresponding to the highest single pulse energy of 1.66 mu J. The shortest pulse width and highest pulse repetition rate were 157 ns and 169 kHz, respectively. Using a nanoscan beam analyzer, the M2 values of graphene Q-switched Cr: ZnSe laser were measured to be 1.09 and 1.16 for the horizontal and vertical directions. The experimental results indicate that graphene, combined with SiC substrate, provides a simple and cheap way to achieve efficient passively Q-switched lasers at 2.4 mu m.