• 文献标题:   The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction
  • 文献类型:   Article
  • 作  者:   PAN MC, LI PS, QIU WC, ZHAO JQ, PENG JP, HU JF, HU JH, TIAN WG, HU YG, CHEN DX, WU XZ, XU ZJ, YUAN XF
  • 作者关键词:   graphene, magnetic tunneling junction, spintronics device, noncollinear, anisotropy
  • 出版物名称:   JOURNAL OF MAGNETISM MAGNETIC MATERIALS
  • ISSN:   0304-8853 EI 1873-4766
  • 通讯作者地址:   Natl Univ Def Technol
  • 被引频次:   1
  • DOI:   10.1016/j.jmmm.2018.01.016
  • 出版年:   2018

▎ 摘  要

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device. (C) 2018 Elsevier B.V. All rights reserved.