▎ 摘　　要

Graphene oxide with high conductivity is today's demand not only for high quality graphene synthesis but also for direct applications in electronic devices. Here we demonstrate a milder bulk synthesis approach for graphene oxide (mGO) from tattered graphite showing long range ordering and much higher conductivity (27 S m(-1)) compared to Hummers graphene oxide (H-GO) (0.8 S m(-1)). A two step mild oxidation process is adapted instead of excessive oxidation of graphite based on Hummers method which creates permanent defects in carbon sheets. This work demonstrates the mild oxidation process for highly conducting GO preparation without use of NaNO3 inhibiting the evolution of toxic gases and also possessing bulk synthesis possibilities.