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- 文献标题: Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors
- 文献类型: Article
- 作 者: MENG J, WU HC, CHEN JJ, LIN F, BIE YQ, SHVETS IV, YU DP, LIAO ZM
- 作者关键词: hysteresi, graphene, fieldeffect transistor, trap state, photoelectrical response
- 出版物名称: SMALL
- ISSN: 1613-6810 EI 1613-6829
- 通讯作者地址: Peking Univ
- 被引频次: 13
- DOI: 10.1002/smll.201202947
- 出版年: 2013
