• 文献标题:   Edge-Limited Valley-Preserved Transport in Quasi-1D Constriction of Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   LEE H, PARK GH, PARK J, LEE GH, WATANABE K, TANIGUCHI T, LEE HJ
  • 作者关键词:   bilayer graphene, conductance quantization, intervalley scattering, undercut etching, valleytronic
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   1
  • DOI:   10.1021/acs.nanolett.8b02750
  • 出版年:   2018

▎ 摘  要

We investigated the quantization of the conductance of quasi-one-dimensional (quasi-1D) constrictions in high-mobility bilayer graphene (BLG) with different geometrical aspect ratios. Ultrashort (a few tens of nanometers long) constrictions were fabricated by applying an undercut etching technique. Conductance was quantized in steps of similar to 4e(2)/h (similar to 2e(2)/h) in devices with aspect ratios smaller (larger) than 1. We argue that scattering at the edges of a quasi-1D BLG constriction limits the intervalley scattering length, which causes valley-preserved (valley-broken) quantum transport in devices with aspect ratios smaller (larger) than 1. The subband energy levels, analyzed in terms of the bias-voltage and temperature dependences of the quantized conductance, indicated that they corresponded well to the effective channel width of a physically defined conducting channel with a hard-wall confining potential. Our study in ultrashort high-mobility BLG nano constrictions with physically tailored edges clearly confirms that physical edges are the major source of intervalley scattering in graphene in the ballistic limit.