▎ 摘　　要

A high-responsivity 3D graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT two-dimensional electron gas (2DEG) photodetector is investigated and simulated using DevEdit and ATLAS 3D under SILVACO Tools. The InAs donor layer above the 2DEG contributes to the photocurrent using the InSb channel layer and graphene in the gate for light absorption. An illumination drain current equal to 57.5 mA was obtained with a rejection ratio (illumination current/dark current) equal to 1.02 A/W and 0.5 x 10(-6)A/W available photocurrent, with high responsivity equal to 15.3 x 10(3)A/W at 100 nm wavelength and 100 GHz bandwidth. This property makes the device a suitable candidate for detection in the UV region of the spectrum. It can also be used in a number of medical, military and space applications.