▎ 摘 要
A semi-analytical model for breakdown voltage (BV) of double gate GNR FET (DG-GNRFET) is presented. Firstly, a model for ionization coefficient of GNR is presented and verified using Monte Carlo simulation. Secondly, the surface potential and length of saturation region is presented employing Poisson's Equation. Finally, the breakdown voltage is modelled using avalanche breakdown condition.