• 文献标题:   Materialization of strained CVD-graphene using thermal mismatch
  • 文献类型:   Article
  • 作  者:   LEE SM, KIM SM, NA MY, CHANG HJ, KIM KS, YU H, LEE HJ, KIM JH
  • 作者关键词:   graphene, strain engineering, thermal mismatch, strained graphene
  • 出版物名称:   NANO RESEARCH
  • ISSN:   1998-0124 EI 1998-0000
  • 通讯作者地址:   Korea Inst Machinery Mat
  • 被引频次:   4
  • DOI:   10.1007/s12274-015-0719-9
  • 出版年:   2015

▎ 摘  要

Theoretical physics foretells that "strain engineering" of graphene could hold the key to finding treasures still hidden in two-dimensional (2D) condensed matter physics and commercializing graphene-based devices. However, to produce strained graphene in large quantities is not an easy task by any means. Here, we demonstrate that thermal annealing of graphene placed on various substrates could be a surprisingly simple method for preparing strained graphene with a large area. We found that enhanced graphene-substrate interfacial adhesion plays a critical role in developing strained graphene. Creative device architectures that consider the thermal mismatch between graphene and the target substrate could enable the resulting strain to be intentionally tailored. We believe that our proposed method could suggest a shortcut to realization of graphene straintronics.